Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

Vacuum

Volumn 82, Issue 2 SPEC. ISS., 2007, Pages 193-196

  Vanko, G ^a   Lalinsky T ^a   Mozolová, Ž ^a   Liday, J ^b   Vogrincic P ^b   Vincze, A ^c   Uherek, F ^c   Haščík, Š ^a   Kostic I ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INTERNATIONAL LASER CENTER   (Slovakia)

^d INSTITUTE OF INFORMATICS   (Slovakia)

Author keywords

Contact resistivity; CTLM method; Depth profiling; Metal nitride phases

Indexed keywords

DEPOSITION; DEPTH PROFILING; SURFACE MORPHOLOGY; THERMAL EFFECTS;

CONTACT RESISTIVITY; CTLM METHOD; METAL-NITRIDE PHASES;

ALUMINUM ALLOYS;

EID: 35248832100     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.07.020     Document Type: Article

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