AlGaN/GaN C-HEMT structures for dynamic stress detection

Sensors and Actuators, A: Physical

Volumn 172, Issue 1, 2011, Pages 98-102

  Vanko, Gabriel ^a   Držík, Milan ^b   Vallo, Martin ^a   Lalinský, Tibor ^a   Kutiš, Vladimír ^c   Stančík, Stanislav ^c   Rýger, Ivan ^a   Benčurová, Anna ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b International Laser Cente   (Slovakia)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d INSTITUTE OF INFORMATICS   (Slovakia)

Author keywords

AlGaN GaN; Cantilever; Circular HEMT; Piezoelectric response; stress sensor

Indexed keywords

ALGAN/GAN; CANTILEVER; DYNAMIC STRESS; FREQUENCY RANGES; GATE BIAS; OPTIMAL SELECTION; PIEZOELECTRIC POLARIZATIONS; PIEZOELECTRIC RESPONSE; RING ELECTRODES; SCHOTTKY GATE; SENSOR STRUCTURES; STRESS DETECTION; STRESS SENSOR;

ELECTRON MOBILITY; GALLIUM NITRIDE; PIEZOELECTRICITY; SENSORS; STRESS MEASUREMENT; STRESSES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 82755187355     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.02.049     Document Type: Conference Paper

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