Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

Volumn , Issue , 2010, Pages 127-130

  Edwards, M J ^a,b   Vittoz, S ^c   Amen, R ^d   Rufer, L ^c   Johander, P ^d   Bowen, C R ^a   Allsopp, D W E ^b  

^a University of Bath   (United Kingdom)

^b University of Bath   (United Kingdom)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d SWEREA IVF   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; HARSH ENVIRONMENT; MODELLING AND OPTIMISATION; POTENTIAL SENSOR; PRESSURE CHANGE; PRESSURE SENSING; SENSOR STRUCTURES;

BEHAVIORAL RESEARCH; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSYSTEMS; PRESSURE SENSORS; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

MECHANICAL PROPERTIES;

EID: 78651448429     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2010.5666320     Document Type: Conference Paper

References (5)

1. Eaton, W.P. and J.H. Smith, Micromachined pressure sensors: review and recent developments. Smart Materials and Structures, 1997. 6(5): p. 530.
2. Yasukawa, A., et al., Design considerations for silicon circular diaphragm pressure sensors. Japanese Journal of Applied Physics, 1982. 21: p. 1049.
3. Sahagen, A.N., Pressure sensing transducer employing piezoresistive elements on sapphire. 1991, Pat. No. 4994781.
4. Sahagen, A.N., Piezoresistive pressure transducer. 1991, Pub. No. WO/1991/017418
5. Strittmatter, R., Development of micro-electromechanical systems in GaN. Dissertation (Ph.D.), California Institute of Technology, 2003.