GaN based high temperature strain gauges

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 2, 2008, Pages 195-198

  Tilak, V ^a   Jiang, J ^a   Batoni, P ^b   Knobloch, A ^a  

^a GE GLOBAL RESEARCH   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE STRAIN GAUGES; METAL-INSULATOR-SEMICONDUCTOR (MIS) CAPACITORS; PIEZOELECTRIC POLARIZATION FIELDS;

CAPACITORS; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE TESTING; PIEZOELECTRICITY; STRAIN GAGES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 38549146941     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9331-4     Document Type: Conference Paper

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