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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 B, 1999, Pages

Dependence of crystal quality on residual strain in strain-controlled thin AlN layer grown by metalorganic vapor phase epitaxy

(6) Ishihara, Yoshiyuki a Yamamoto, Jun a Kurimoto, Makoto a Takano, Takayoshi a Honda, Tohru a Kawanishi, Hideo a

a KOGAKUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; QUALITY CONTROL; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; STRAIN; X RAY CRYSTALLOGRAPHY;

ALTERNATING-SOURCE-FEEDING TECHNIQUE (ASF); ALUMINUM NITRIDE; CRYSTAL QUALITY; RESIDUAL STRAIN; X RAY ROCKING CURVE;

SEMICONDUCTING FILMS;

EID: 0033337947 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l1296 Document Type: Article

Times cited : (31)

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