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Volumn , Issue 1, 2002, Pages 263-266

Effect of barrier thickness and barrier doping on the properties of InGaN/GaN multiple-quantum-well structure light emitting diode

(4) Tsai, Tzong Liang a Chang, Chih Sung a Chen, Tzer Peng a Huang, Kuo Hsin a

a Science Based Industrial Park (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTROLUMINESCENCE; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR DOPING; SILICON;

BARRIER THICKNESS; ELECTRICAL CHARACTERISTIC; EMISSION ENERGIES; FORWARD VOLTAGE; INGAN/GAN MULTI-QUANTUM WELL; MULTIPLE QUANTUM-WELL STRUCTURES; OPTICAL AND ELECTRICAL PROPERTIES; REVERSE CURRENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84875090097 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390039 Document Type: Conference Paper

Times cited : (14)

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