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Volumn 563, Issue , 2013, Pages 207-215

Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

Author keywords

Cu(In,Ga)Se2 (CIGS); Optical studies; Precursor; Sputtering

Indexed keywords

ABSORPTION CO-EFFICIENT; CU (IN ,GA)SE; ENERGY DISPERSIVE SPECTROSCOPIES (EDS); FUNDAMENTAL ABSORPTION EDGE; OPTICAL STUDY; PRECURSOR; SCANNING ELECTRON MICROSCOPE; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

EID: 84875047693     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.02.112     Document Type: Article
Times cited : (28)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.