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Volumn 513, Issue , 2012, Pages 68-74

Characteristics of Cu(In,Ga)Se 2 (CIGS) thin films deposited by a direct solution coating process

(10) Park, Myoungguk a Ahn, Sejin a Yun, Jae Ho a Gwak, Jihye a Cho, Ara a Ahn, Seoungkyu a Shin, Keeshik a Nam, Dahyun b Cheong, Hyeonsik b Yoon, Kyunghoon a

a Korea Institute of Energy Research (KIER) (South Korea)

b Sogang University (South Korea)

Author keywords

CIGS; Non vacuum; Solar cells; Solution; Thin film

Indexed keywords

BOTTOM LAYERS; CIGS; COATING PROCESS; CU(IN , GA)SE; CURRENT FLOWS; DIRECT SOLUTION; DOUBLE-LAYERED STRUCTURE; GA CONTENT; LINEAR RELATIONSHIPS; LOW-COST PRECURSOR; METAL RATIO; NON-VACUUM; PRECURSOR SOLUTIONS; SELENIZATION; SIZE DIFFERENCE; STRUCTURAL AND OPTICAL PROPERTIES; UPPER LAYER;

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; COATINGS; COPPER; COPPER COMPOUNDS; GALLIUM; OPTICAL PROPERTIES; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLUTIONS; THIN FILMS; VACUUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

OPTICAL FILMS;

EID: 83555173260 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.09.080 Document Type: Article

Times cited : (88)

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