Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Yao, Jia Hsien ^a   Lin, Hsiu Hau ^a   Soo, Yun Liang ^a,b   Wu, Tai Sing ^a   Tsai, Jai Lin ^c   Lan, Ming Der ^c   Chin, Tsung Shune ^a,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; CHARACTERIZATION TECHNIQUES; FERROMAGNETIC ORDERS; MAGNETIC CLUSTER; MN-DOPED; ROOM TEMPERATURE; ROOM-TEMPERATURE FERROMAGNETISM; SEMICONDUCTOR SPINTRONICS; SI-BASED;

FERROMAGNETISM; INFORMATION TECHNOLOGY; MAGNETIC SEMICONDUCTORS; MANGANESE; SEMICONDUCTING SILICON; SILICON;

AMORPHOUS SILICON;

EID: 84863239722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691173     Document Type: Article

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