Structural characterization and observation of variable range hopping conduction mechanism at high temperature in CdSe quantum dot solids

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Sinha, Subhojyoti ^a   Kumar Chatterjee, Sanat ^a   Ghosh, Jiten ^b   Kumar Meikap, Ajit ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b CSIR CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTIVITY; AMBIENT LIGHT; ARRHENIUS; CDSE QUANTUM DOTS; COMPARATIVE STUDIES; DC CONDUCTIVITY; DIELECTRIC PARAMETERS; FTIR SPECTROSCOPY; HIGH TEMPERATURE; I - V CURVE; MICROSTRUCTURAL PARAMETERS; QUANTUM CONFINEMENT EFFECTS; REFINEMENT TECHNIQUES; RIETVELD; SCHNAKENBERG MODELS; SMALL POLARON HOPPING; STRUCTURAL CHARACTERIZATION; THIOGLYCOLIC ACID; TUNNELING MECHANISM; UV-VISIBLE; VARIABLE-RANGE HOPPING CONDUCTION; WEIGHT FACTOR;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; RIETVELD REFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84874783256     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794019     Document Type: Article

References (63)

1. A. Z. Khosousi, P. E. Trudeau, Y. Suganuma, A. A. Dhirani, and B. Statt, Phys. Rev. Lett. 96, 156403 (2006). 10.1103/PhysRevLett.96.156403
2. D. V. Talapin and C. B. Murray, Science 310, 86 (2005). 10.1126/science.1116703
3. I. Gur, N. A. Fromer, M. L. Geier, and A. P. Alivisatos, Science 310, 462 (2005). 10.1126/science.1117908
4. R. D. Schaller, V. M. Agranovich, and V. I. Klimov, Nat. Phys. 1, 189 (2005). 10.1038/nphys151
5. J. A. Hansen, J. Wang, A. N. Kawde, Y. Xiang, K. V. Gothelf, and G. Collins, J. Am. Chem. Soc. 128, 2228 (2006). 10.1021/ja060005h
6. G. Konstantatos, I. Howard, A. Fischer, S. Hoogland, J. Clifford, E. Klem, L. Levina, and E. H. Sargent, Nature 442, 180 (2006). 10.1038/nature04855
7. S. J. Kim, W. J. Kim, A. N. Cartwright, and P. N. Prasad, Appl. Phys. Lett. 92, 191107 (2008). 10.1063/1.2920477
8. M. Drndic, M. V. Jarosz, N. Y. Morgan, M. A. Kastner, and M. G. Bawendi, J. Appl. Phys. 92, 7498 (2002). 10.1063/1.1523148
9. D. Yu, B. L. Wehrenberg, P. Jha, J. Ma, and P. G. Sionnest, J. Appl. Phys. 99, 104315 (2006). 10.1063/1.2192288
10. D. Yu, C. Wang, and P. G. Sionnest, Science 300, 1277 (2003). 10.1126/science.1084424
11. H. Liu, A. Pourret, and P. G. Sionnest, ACS Nano 4, 5211 (2010). 10.1021/nn101376u
12. D. Yu, C. Wang, B. L. Wehrenberg, P. Jha, J. Ma, and P. G. Sionnest, Phys. Rev. Lett. 92, 216802 (2004). 10.1103/PhysRevLett.92.216802
13. J. H. Chu, M. Radulaski, N. Vukmirovic, H. P. Cheng, and L. W. Wang, J. Phys. Chem. C 115, 21409 (2011). 10.1021/jp206526s
14. H. E. Romero and M. Drndic, Phys. Rev. Lett. 95, 156801 (2005). 10.1103/PhysRevLett.95.156801
15. H. M. Rietveld, J. Appl. Crystallogr. 2, 65 (1969). 10.1107/ S0021889869006558
16. R. A. Young, The Rietveld Method (Oxford University Press, Oxford, 1993).
17. See http://www.PANalytical.com for more detailed information about the X-ray diffractometer and the features of the software's like X'pert High Score Plus which was used for the Rietveld refinement of the XRD pattern.
18. H. Jiang and H. Ju, Chem. Commun. 4, 404 (2007). 10.1039/B616007G
19. S. Neeleshwar, C. L. Chen, C. B. Tsai, Y. Y. Chen, C. C. Chen, S. G. Shyu, and M. S. Seehra, Phys. Rev. B 71, 201307 (2005). 10.1103/PhysRevB.71. 201307
20. L. E. Brus, J. Phys. Chem. 90, 2555 (1986). 10.1021/j100403a003
21. N. G. Semaltianos, S. Logothetidis, W. Perie, S. Romani, R. J. Potter, M. Sharp, P. French, G. Dearden, and K. G. Watkins, Europhys. Lett. 84, 47001 (2008). 10.1209/0295-5075/84/47001
22. V. Albe, C. Jouanin, and D. Bertho, Phys. Rev. B 58, 4713 (1998). 10.1103/PhysRevB.58.4713
23. P. Reiss, M. Protiere, and L. Li, Small 5, 154 (2009). 10.1002/smll.200800841
24. K. Yu, M. Z. Hu, R. Wang, M. L. Piolet, M. Frotey, M. B. Zaman, X. Wu, D. M. Leek, Y. Tao, D. Wilkinson, and C. Li, J. Phys. Chem. C 114, 3329 (2010). 10.1021/jp909310a
25. D. Patidar, K. S. Rathore, N. S. Saxena, K. Sharma, and T. P. Sharma, Chalcogenide Lett. 5, 21 (2008).
26. R. Seoudi, M. M. Elokr, A. A. Shabaka, and A. Sobhi, Physica B 403, 152 (2008). 10.1016/j.physb.2007.08.095
27. N. F. Mott and E. Davis, Electronic Process in Nanocrystalline Materials, 2nd ed. (Clarendron, Oxford, 1979).
28. N. F. Mott, J. Non-Cryst. Solids 1, 1 (1968). 10.1016/0022-3093(68)90002- 1
29. A. Karmakar, S. Majumdar, and S. Giri, J. Phys.: Condens. Matter 23, 495902 (2011). 10.1088/0953-8984/23/49/495902
30. J. Schnakenberg, Phys. Status Solidi 28, 623 (1968). 10.1002/pssb. 19680280220
31. I. G. Austin and N. F. Mott, Adv. Phys. 18, 41 (1969). 10.1080/00018736900101267
32. A. R. Long, Adv. Phys. 31, 553 (1982). 10.1080/00018738200101418
33. S. R. Elliott, Adv. Phys. 36, 135 (1987). 10.1080/00018738700101971
34. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectric, London, 1983).
35. J. R. Macdonald, J. Appl. Phys. 58, 1971 (1985). 10.1063/1.336004
36. W. K. Lee, J. F. Liu, and A. S. Nowick, Phys. Rev. Lett. 67, 1559 (1991). 10.1103/PhysRevLett.67.1559
37. A. S. Nowick, A. V. Vaysley, and B. S. Lim, J. Appl. Phys. 76, 4429 (1994). 10.1063/1.357338
38. W. Bai, G. Chen, J. Y. Zhu, J. Yang, T. Lin, X. J. Meng, X. D. Tang, C. G. Duan, and J. H. Chu, Appl. Phys. Lett. 100, 082902 (2012). 10.1063/1.3688033
39. M. P. J. van Staveren, H. B. Brom, and L. J. de Jongh, Phys. Rep. 208, 1 (1991). 10.1016/0370-1573(91)90013-C
40. S. M. Soosen, A. Chandran, M. J. Koshy, and K. C. George, J. Appl. Phys. 109, 113702 (2011). 10.1063/1.3594709
41. A. Chandran, S. M. Soosen, J. Koshy, and K. C. George, J. Appl. Phys. 109, 084314 (2011). 10.1063/1.3569744
42. P. Lunkenheimer, V. Bobnar, A. V. Pronin, A. I. Ritus, A. A. Volkov, and A. Loidl, Phys. Rev. B 66, 052105 (2002). 10.1103/PhysRevB.66.052105
43. G. Chakraborty, K. Gupta, A. K. Meikap, R. Babu, and W. J. Blau, J. Appl. Phys. 109, 033707 (2011). 10.1063/1.3544204
44. J. C. Maxwell, A Treatise on Electricity and Magnetism (Oxford University Press, Oxford, 1988), Vol. 1.
45. K. W. Wagner, Ann. Phys. (Lpz.) 40, 53 (1913).
46. V. Hippel, Dielectrics and Waves (Wiley, New York, 1954).
47. J. B. M. Krishna, A. Saha, G. S. Okram, A. Soni, S. Purakayastha, and B. Ghosh, J. Phys. D: Appl. Phys. 42, 095404 (2009). 10.1088/0022-3727/42/9/095404
48. N. G. McCrum, B. E. Read, and G. Williams, An Elastic and Dielectric Effects in Polymeric Solids (John Wiley and Sons, New York, 1967).
49. A. Karmakar, S. Majumdar, and S. Giri, Phys. Rev. B 79, 094406 (2009). 10.1103/PhysRevB.79.094406
50. A. Seeger, P. Lunkenheimer, J. Hemberger, A. A. Mukhin, V. Yu. Ivanov, A. M. Balbashov, and A. Loidl, J. Phys.: Condens. Matter 11, 3273 (1999). 10.1088/0953-8984/11/16/009
51. J. L. Cohn, M. Peterca, and J. J. Neumeier, Phys. Rev. B 70, 214433 (2004). 10.1103/PhysRevB.70.214433
52. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
53. S. K. Tripathi and M. Sharma, J. Appl. Phys. 111, 074513 (2012). 10.1063/1.3698773
54. A. J. Chiquito, C. A. Amorim, O. M. Berengue, L. S. Araujo, E. P. Bernardo, and E. R. Leite, J. Phys.: Condens. Matter 24, 225303 (2012). 10.1088/0953-8984/24/22/225303
55. W. G. Oldham and A. G. Milnes, Solid-State Electron. 7, 153 (1964). 10.1016/0038-1101(64)90140-6
56. T. Nagano, M. Tsutsui, R. Nouchi, N. Kawasaki, Y. Ohta, Y. Kubozono, C. Takahashi, and A. Fujiwara, J. Phys. Chem. C 111, 7211 (2007). 10.1021/jp0708751
57. S. Pitcher, J. A. Thiele, H. Ren, and J. F. Vetelino, Sens. Actuators B 93, 454 (2003). 10.1016/S0925-4005(03)00166-7
58. M. Julliere, Phys. Lett. A 54, 225 (1975). 10.1016/0375-9601(75)90174-7
59. A. K. Raychaudhuri, K. P. Rajeev, H. Srikanth, and N. Gayathri, Phys. Rev. B 51, 7421 (1995). 10.1103/PhysRevB.51.7421
60. M. Zeise, Phys. Rev. B 60, R738 (1999). 10.1103/PhysRevB.60.R738
61. M. Paranjape, J. Mitra, A. K. Raychaudhuri, N. K. Todd, N. D. Mathur, and M. G. Blamire, Phys. Rev. B 68, 144409 (2003). 10.1103/PhysRevB.68.144409
62. S. Das, S. Majumdar, and S. Giri, Phys. Lett. A 373, 2890 (2009). 10.1016/j.physleta.2009.06.004
63. A. M. Smith, A. M. Mohs, and S. Nie, Nat. Nanotechnol. 4, 56 (2009). 10.1038/nnano.2008.360