Oxygen-vacancy-related dielectric relaxations in SrTiO3 at high temperatures

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Wang, C C ^a   Lei, C M ^a   Wang, G J ^a   Sun, X H ^a   Li, T ^a   Huang, S G ^a   Wang, H ^a   Li, Y D ^a  

^a ANHUI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BULK EFFECT; CERAMIC SAMPLES; CHARGED OXYGEN VACANCIES; HIGH TEMPERATURE; LOW TEMPERATURES; ROOM TEMPERATURE; SINGLE CRYSTAL SAMPLES; SRTIO; VACANCY CLUSTER;

CERAMIC MATERIALS; DIELECTRIC PROPERTIES; OXYGEN; SINGLE CRYSTALS; STRONTIUM TITANATES;

OXYGEN VACANCIES;

EID: 84874782161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794349     Document Type: Article

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