Joule's law for organic transistors exploration: Case of contact resistance

Journal of Applied Physics

Volumn 113, Issue 6, 2013, Pages

  Xu, Yong ^a,b   Liu, Chuan ^a,b   Li, Yun ^a,b   Minari, Takeo ^a   Darmawan, Peter ^a,b   Balestra, Francis ^c   Ghibaudo, Gerard ^c   Tsukagoshi, Kazuhito ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISSIPATED POWER; HOPPING TRANSPORT; IDEAL OHMIC CONTACTS; IN-BUILDINGS; MACROSCOPIC MODEL; MOBILITY ANISOTROPY; OPERATING MECHANISM; ORGANIC TRANSISTOR; STAGGERED CONFIGURATION;

ELECTRIC FIELDS; OHMIC CONTACTS; ORGANIC FIELD EFFECT TRANSISTORS; TRANSPORT PROPERTIES;

CONTACT RESISTANCE;

EID: 84874303308     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792066     Document Type: Article

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