Fundamental benefits of the staggered geometry for organic field-effect transistors

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1302-1304

  Kim, Chang Hyun ^a   Bonnassieux, Yvan ^a   Horowitz, Gilles ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

2 D simulation; Contact resistance; device geometry; organic field effect transistors (OFETs)

Indexed keywords

CARRIER CONCENTRATION; CONTACT RESISTANCE; TRANSISTORS;

2-D DEVICE SIMULATIONS; 2-D SIMULATION; CHANNEL POTENTIAL; CONTACT ELECTRODES; CURRENT VOLTAGE CURVE; DEVICE GEOMETRIES; TRANSISTOR MODEL;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80052031861     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160249     Document Type: Article

References (12)

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