Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Schwarz, C ^a   Yadav, A ^a   Shatkhin, M ^a   Flitsiyan, E ^a   Chernyak, L ^a   Kasiyan, V ^b   Liu, L ^c   Xi, Y Y ^c   Ren, F ^c   Pearton, S J ^d   Lo, C F ^e   Johnson, J W ^e   Danilova, E ^f  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

^e KOPIN CORPORATION   (United States)

^f INSTITUTE OF NUCLEAR PHYSICS   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRON-BEAM-INDUCED CURRENT; ELECTRONIC CARRIERS; GAMMA IRRADIATION; NITROGEN VACANCIES; RADIATION INDUCED DEFECTS; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; DRAIN CURRENT; ELECTRON BEAMS; GALLIUM NITRIDE; GAMMA RAYS; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84874264281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792240     Document Type: Article

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