Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Wilsch, Benjamin ^a   Jahn, Uwe ^a   Jenichen, Bernd ^a   Lähnemann, Jonas ^a   Grahn, Holger T ^a   Wang, Hui ^b   Yang, Hui ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; COMPOSITION VARIATION; ENERGY DISPERSIVE X-RAY; GAN TEMPLATE; GROWTH DIRECTIONS; INDIUM CONTENT; LATERAL VARIATIONS; N LAYERS; PULLING EFFECT; SPATIALLY RESOLVED; STRAIN STATE;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRAIN RELAXATION; X RAY DIFFRACTION;

INDIUM;

EID: 84874077620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790591     Document Type: Article

References (13)

1. F. Morales, D. Gonzalez, J. Lozano, R. Garcia, S. Hauguth-Frank, V. Lebedev, V. Cimalla, and O. Ambacher, Acta Mater. 57, 5681 (2009). 10.1016/j.actamat.2009.07.063
2. H. Wang, D. S. Jiang, U. Jahn, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, Y. X. Qiu, and H. Yang, Physica B 405, 4668 (2010). 10.1016/j.physb.2010. 08.058
3. H. Wang, D. S. Jiang, U. Jahn, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, and H. Yang, Thin Solid Films 518, 5028 (2010). 10.1016/j.tsf.2010.03.163
4. S. Pereira, M. R. Correia, T. Monteiro, E. Pereira, E. Alves, A. D. Sequeira, and N. Franco, Appl. Phys. Lett. 78, 2137 (2001). 10.1063/1.1358368
5. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, Appl. Phys. Lett. 80, 3913 (2002). 10.1063/1.1481786
6. S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O'Donnell, E. Alves, N. Franco, and A. D. Sequeira, Appl. Phys. Lett. 81, 1207 (2002). 10.1063/1.1499220
7. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, and N. Franco, Appl. Phys. Lett. 79, 1432 (2001). 10.1063/1.1397276
8. K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, and K. Oki, MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).
9. P. Hovington, D. Drouin, and R. Gauvin, Scanning 19, 1 (1997). 10.1002/sca.4950190101
10. H. Demers, N. Poirier-Demers, A. R. Couture, D. Joly, M. Guilmain, N. De Jorge, and D. Drouin, Scanning 33, 135 (2011). 10.1002/sca.20262
11. M. D. McCluskey, C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett. 72, 2725 (1998). 10.1063/1.121072
12. A. F. Wright, K. Leung, and M. van Schilfgaarde, Appl. Phys. Lett. 78, 189 (2001). 10.1063/1.1338490
13. P. G. Moses and C. G. Van de Walle, Appl. Phys. Lett. 96, 021908 (2010). 10.1063/1.3291055