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Advanced Materials

Volumn 25, Issue 8, 2013, Pages 1109-1113

Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells

(6) Li, Liang a Lu, Hao a Yang, Zongyin b Tong, Limin b Bando, Yoshio c Golberg, Dmitri c

a SOOCHOW UNIVERSITY (China)

b ZHEJIANG UNIVERSITY (China)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

bandgaps; field effect transistors; nanowires; solar cells

Indexed keywords

CDS; GRADED BANDGAP; OPTOELECTRONIC APPLICATIONS; SCHOTTKY JUNCTIONS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; ENERGY GAP; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

NANOWIRES;

CADMIUM DERIVATIVE; CADMIUM SULFIDE; GOLD; NANOWIRE; SELENIUM DERIVATIVE; SULFIDE; SULFUR DERIVATIVE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; SOLAR ENERGY;

CADMIUM COMPOUNDS; GOLD; NANOWIRES; SELENIUM COMPOUNDS; SOLAR ENERGY; SULFIDES; SULFUR COMPOUNDS; TRANSISTORS, ELECTRONIC;

EID: 84874057949 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201204434 Document Type: Article

Times cited : (80)

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