Influence of annealing on tunnelling magnetoresistance of perpendicular magnetic tunnel junctions

Journal of Physics D: Applied Physics

Volumn 46, Issue 9, 2013, Pages

  Natarajarathinam, A ^a,c   Clark, B D ^a,c   Singh, A ^a   Gupta, S ^a,b  

^a UNIVERSITY OF ALABAMA   (United States)

^b University of Alabama   (United States)

^c The Aerospace Engineering and Mechanics Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ANNEALING TIME; CO/PD MULTILAYERS; FREE LAYERS; HIGH VACUUM; IN-PLANE ANISOTROPY; M-H LOOPS; MAGNETIC TUNNEL JUNCTION; MINOR LOOP; PERPENDICULAR MAGNETIC ANISOTROPY; PINNED LAYERS; SOAKING TIME; SYNTHETIC ANTIFERROMAGNETS; TRANSPORT MEASUREMENTS;

MAGNETIC DEVICES; OPTIMIZATION; TRANSPORT PROPERTIES; TUNNELLING MAGNETORESISTANCE;

ANNEALING;

EID: 84874038374     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/9/095002     Document Type: Article

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