Effect of POCl3 annealing on reliability of thermal oxides grown on 4H-SiC

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 739-742

  Morishita, Ryuji ^a   Yano, Hiroshi ^a   Okamoto, Dai ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

4H SiC; Constant current TDDB; MOS; Reliability; TZDB

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRON INJECTION; ELECTRONS; MOLYBDENUM; RELIABILITY; SILICON CARBIDE;

4H-SIC; CONSTANT-CURRENT TDDB; FLAT-BAND VOLTAGE SHIFT; HIGH FREQUENCY CAPACITANCE; INJECTED ELECTRONS; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME-ZERO DIELECTRIC BREAKDOWNS; TZDB;

CHLORINE COMPOUNDS;

EID: 84861350475     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.739     Document Type: Conference Paper

References (5)

1. H. Yano et al. Appl. Phys. Lett. 81, 301 (2002).
2. D. Okamoto et al. Appl. Phys. Lett. 96, 203508 (2010).
3. D. Okamoto et al. IEEE Electron Device Lett. 31, 710 (2010).
4. D. Okamoto et al. Mater. Res. Soc. Symp. Proc. 1246-B06-06 (2010).
5. E. H. Nicollian, C, N. Berglund, P. E. Schmidt and J. m. Andrew: J. Appl. Phys., 42, 5654 (1971).