Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires

Progress in Natural Science: Materials International

Volumn 23, Issue 1, 2013, Pages 85-88

  Xia, Hui ^a   Yao, Bimu ^a   Lu, Zhenyu ^a   Chen, Pingping ^a   Li, Tianxin ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

GaAs nanowire; Minority carrier lifetime; Photoconductive property

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER LIFETIME; CURVE FITTING; ENERGY HARVESTING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LASER EXCITATION; PHOTOCONDUCTIVITY; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SOLAR ENERGY;

CARRIER DYNAMICS; CURRENT VOLTAGE PROPERTIES; ELECTRICAL BEHAVIORS; GAAS NANOWIRES; MINORITY CARRIER LIFETIMES; PHOTOCONDUCTIVE PROPERTIES; PHOTOELECTRIC BEHAVIOR; SEMICONDUCTOR NANOWIRE; SINGLE WIRES; VERTICALLY ALIGNED;

NANOWIRES;

EID: 84874009263     PISSN: 10020071     EISSN: 17455391     Source Type: Journal    
DOI: 10.1016/j.pnsc.2013.01.015     Document Type: Article

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