Microstructure evolution of sputtered BiSb-Te thermoelectric films during post-annealing and its effects on the thermoelectric properties

Journal of Alloys and Compounds

Volumn 553, Issue , 2013, Pages 343-349

  Jeon, Seong Jae ^a,c   Jeon, Haseok ^c   Na, Sekwon ^c   Kang, Stephen D ^b   Lyeo, Ho Ki ^b   Hyun, Seungmin ^a   Lee, Hoo Jeong ^c  

^a Korea Institute of Machine and Materials   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Annealing effects; BiSb Te film; Grain growth; Thermoelectric materials

Indexed keywords

ANNEALING EFFECTS; ANNEALING TIME; AS-DEPOSITED FILMS; BI-SB-TE; ELECTRONIC TRANSPORT; MICROSTRUCTURE EVOLUTIONS; NANOCRYSTALLINES; POST ANNEALING; THERMOELECTRIC FILM; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES;

ANNEALING; ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM GROWTH; GRAIN GROWTH; MICROSTRUCTURE; RAMAN SPECTROSCOPY; TELLURIUM; THERMOELECTRIC EQUIPMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

THERMOELECTRICITY;

EID: 84873845057     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.040     Document Type: Article

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