Thermoelectric properties of p-type Bi-Sb-Te thin films with various compositions using a combinatorial method

Electronic Materials Letters

Volumn 7, Issue 1, 2011, Pages 45-49

  Lee, Hee Jung ^a   Hyun, Seungmin ^a   Park, Hyun Seong ^a   Han, Seungwoo ^a  

^a Korea Institute of Machine and Materials   (South Korea)

Author keywords

Bi Sb Te; combinatorial method; crystal structure; sputtering; thermoelectric materials; x ray diffraction

Indexed keywords

BI-SB-TE; BISMUTH-TELLURIDE; COMBINATORIAL METHOD; ELECTRON PROBE X-RAY MICRO ANALYZERS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; EPMA; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; MAXIMUM POWER FACTOR; P-TYPE; POST ANNEALING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEM; SINGLE WAFER; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES;

BISMUTH; CRYSTAL MICROSTRUCTURE; DIFFRACTION; ELECTRIC POWER FACTOR; FIELD EMISSION; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

X RAYS;

EID: 79954568594     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-011-0307-4     Document Type: Article

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