Generation-dependent charge carrier transport in Cu(In,Ga)Se 2/CdS/ZnO thin-film solar-cells

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Nichterwitz, Melanie ^a   Caballero, Raquel ^a,b   Kaufmann, Christian A ^a   Schock, Hans Werner ^a   Unold, Thomas ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BEST MODEL; CDS; CDS LAYER; CIGSE SOLAR CELLS; CU (IN ,GA)SE; CURRENT VOLTAGE; DEFECT DISTRIBUTION; DEFECT STATE; ELECTRON-BEAM-INDUCED CURRENT; EXPERIMENTAL DATUM; IV CHARACTERISTICS; KINK EFFECT; LOW TEMPERATURES; ROOM TEMPERATURE; SPATIALLY INHOMOGENEOUS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; CARRIER TRANSPORT; DEFECTS; GALLIUM; HETEROJUNCTIONS; SOLAR CELLS;

INTERFACE STATES;

EID: 84873669438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4788827     Document Type: Article

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