Influences of dopant concentration in sol-gel derived AZO layer on the performance of P3HT:PCBM based inverted solar cell

Solar Energy Materials and Solar Cells

Volumn 111, Issue , 2013, Pages 181-188

  Aprilia, Annisa ^a,b   Wulandari, Priastuti ^a   Suendo, Veinardi ^a   Herman, ^a   Hidayat, Rahmat ^a   Fujii, Akihiko ^c   Ozaki, Masanori ^c  

^a BANDUNG INSTITUTE OF TECHNOLOGY   (Indonesia)

^b PADJADJARAN UNIVERSITY   (Indonesia)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Al doped ZnO (AZO); Inverted solar cell; Organic solar cell; Small AC impedance

Indexed keywords

2-METHOXYETHANOL; AC-IMPEDANCE; ACTIVE LAYER; AL-CONCENTRATION; AL-DOPED ZNO; ALUMINUM-DOPED ZNO; BULK HETEROJUNCTION; DOPANT CONCENTRATIONS; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; ELECTRON TRANSPORT LAYERS; GRAIN SIZE; HALL EFFECT MEASUREMENT; HIGH CONCENTRATION; INVERTED STRUCTURE; J-V CHARACTERISTICS; ORGANIC SOLAR CELL; RESISTANCE INCREASE; SOL-GEL ROUTES;

ALUMINUM; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; CONVERSION EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; HETEROJUNCTIONS; SOL-GEL PROCESS; SOL-GELS; SURFACE MORPHOLOGY; X RAY DIFFRACTION; ZINC OXIDE;

SOLAR CELLS;

EID: 84873370250     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.12.033     Document Type: Article

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