Direct electrodeposition of crystalline silicon at low temperatures

Journal of the American Chemical Society

Volumn 135, Issue 5, 2013, Pages 1684-1687

  Gu, Junsi ^a   Fahrenkrug, Eli ^a   Maldonado, Stephen ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SI; CRYSTALLINE SILICONS; CUBIC CRYSTAL STRUCTURES; CUMULATIVE DATA; DIRECT PRODUCTION; ELECTRO REDUCTION; ELECTRODEPOSITED FILMS; ELECTRON DIFFRACTION DATA; ENERGY DISPERSIVE X-RAY; HETEROGENEOUS REDUCTION; LIQUID GALLIUM; LOW TEMPERATURES; NO ANNEALING; PROPYLENE CARBONATE; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SI CRYSTALS; SOLVENT DECOMPOSITIONS; SOURCE OF ELECTRONS; TEMPLATING AGENTS; WORKING ELECTRODE;

AMORPHOUS CARBON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DEPOSITS; ELECTRODEPOSITION; ELECTROLYTIC REDUCTION; GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

PROPYLENE CARBONATE; SILICON;

ARTICLE; CRYSTAL STRUCTURE; ELECTRODE; ELECTRON MICROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84873339959     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja310897r     Document Type: Article

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