Electrodeposition of Si thin film in a hydrophobic room-temperature molten salt

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Nishimura, Yusaku ^a,b   Fukunaka, Yasuhiro ^a,b   Nishida, Tetsuo ^a,b   Nohira, Toshiyuki ^a,b   Hagiwara, Rika ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; ARCHITECTURAL ACOUSTICS; BIOELECTRIC PHENOMENA; COPPER PLATING; CORROSION; CYCLIC VOLTAMMETRY; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTROLYSIS; FUSED SALTS; IMAGING TECHNIQUES; METALLIZING; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NICKEL; PHOTOELECTRON SPECTROSCOPY; SILICON; SPECTRUM ANALYSIS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; VOLTAMMETRY;

AMORPHOUS SI; BIS(TRIFLUOROMETHANE SULFONYL)IMIDE; ELECTROCHEMICAL SOCIETY (ECS); ENERGY DISPERSIVE X RAY SPECTROSCOPY (EDXS); INITIAL STAGES; MOLTEN SALTS; POTENTIOSTATIC ELECTROLYSIS; ROOM-TEMPERATURE (RT); X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 48249105100     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2952190     Document Type: Article

References (18)

1. A. K. Agrawal and A. E. Austin, J. Electrochem. Soc. 0013-4651 10.1149/1.2127237, 128, 2292 (1981).
2. J. Gobet and H. Tannenberger, J. Electrochem. Soc. 0013-4651 10.1149/1.2095532, 135, 109 (1988).
3. C. H. Lee and F. A. Kröger, J. Electrochem. Soc. 0013-4651 10.1149/1.2124069, 129, 936 (1982).
4. Y. Takeda, R. Kanno, O. Yamamoto, T. R. Rama Mohan, C. -H. Lee, and F. A. Kröger, J. Electrochem. Soc. 0013-4651 10.1149/1.2127597, 128, 1221 (1981).
5. Y. Katayama, M. Yokomizo, T. Miura, and T. Kishi, Electrochemistry (Tokyo, Jpn.), 69, 834 (2001).
6. S. Z. E. Abedin, N. Borissenko, and F. Endres, Electrochem. Commun., 6, 510 (2004).
7. N. Borisenko, S. Z. E. Abedin, and F. Endres, J. Phys. Chem. B 1089-5647 10.1021/jp057337d, 110, 6250 (2006).
8. J. Sun, M. Forsyth, and D. R. MacFarlane, J. Phys. Chem. B 1089-5647 10.1021/jp981159p, 102, 8858 (1998).
9. Y. Katayama, M. Yukumoto, and T. Miura, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1566213, 6, A96 (2003).
10. T. Nohira, K. Yasuda, and Y. Ito, Nat. Mater. 1476-1122 10.1038/nmat900, 2, 397 (2003).
11. M. R. Scriba, C. Arendse, M. Harting, and D. T. Britton, Thin Solid Films 0040-6090 10.1016/j.tsf.2007.06.191, 516, 844 (2008).
12. M. S. Donley, D. R. Baer, and T. G. Stoebe, Surf. Interface Anal. 0142-2421 10.1002/sia.740110611, 11, 335 (1988).
13. J. S. Pan, A. T. S. Wee, C. H. A. Huan, H. S. Tan, and K. L. Tan, J. Appl. Phys. 0021-8979 10.1063/1.361289, 79, 2934 (1996).
14. J. C. Rivìre, J. A. A. Crossley, and B. A. Sexton, J. Appl. Phys. 0021-8979 10.1063/1.341237, 64, 4585 (1988).
15. V. G. Kesler, S. G. Yanovskaya, G. A. Kachurin, A. F. Leier, and L. M. Logvinsky, Surf. Interface Anal. 0142-2421 10.1002/sia.1447, 33, 914 (2002).
16. A. Zwick and R. Carles, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.6024, 48, 6024 (1993).
17. P. A. Temple and C. E. Hathaway, Phys. Rev. B, 7, 3685 (1973).
18. M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phys. Rev. B, 16, 3556 (1977).