Electrochemical reduction of silicon tetrachloride in an intermediate-temperature ionic liquid

Electrochemistry

Volumn 77, Issue 8, 2009, Pages 683-686

  Nishimura, Yusaku ^a   Nohira, Toshiyuki ^a   Morioka, Takayuki ^a   Hagiwara, Rika ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Electrodeposition; Intermediate temperature; Silicon; Silicon tetrachloride; Zinc chloride based molten salts

Indexed keywords

AMORPHOUS SILICON; CHLORINE COMPOUNDS; DEPOSITION RATES; ELECTRODEPOSITION; ELECTRODES; ELECTROLYTIC REDUCTION; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); IONIC LIQUIDS; NICKEL; PHASE INTERFACES; REDUCTION; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THIN FILMS; X RAY SPECTROSCOPY; ZINC; ZINC CHLORIDE; ZINC COMPOUNDS;

CROSS-SECTIONAL OBSERVATIONS; ELECTROCHEMICAL REDUCTIONS; ELECTRODE CONFIGURATIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; INTERMEDIATE TEMPERATURES; MOLTEN SALT; POTENTIOSTATIC ELECTROLYSIS; SILICON TETRACHLORIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350102523     PISSN: 13443542     EISSN: None     Source Type: Journal    
DOI: 10.5796/electrochemistry.77.683     Document Type: Article

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