Lead monoxide PbO: Electronic properties and point defect formation

Journal of Physics Condensed Matter

Volumn 25, Issue 7, 2013, Pages

  Berashevich, J ^a   Semeniuk, O ^a,b   Rubel, O ^a,b   Rowlands, J A ^a   Reznik, A ^a,b  

^a Thunder Bay Regional Research Institute   (Canada)

^b LAKEHEAD UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DECAY; DEEP TRAPS; DEFECT FORMATION; DEFECT STATE; DOMINANT MECHANISM; FIRST-PRINCIPLES CALCULATION; HIGH CONCENTRATION; LEAD VACANCY; PB VACANCY; POLYCRYSTALLINE; SHALLOW TRAPS; SINGLE-CRYSTALLINE;

CALCULATIONS; DEFECTS; ELECTRONIC PROPERTIES; LEAD; POINT DEFECTS; VACANCIES;

LEAD OXIDE;

LEAD; LEAD OXIDE; OXIDE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; LEAD; MODELS, CHEMICAL; MODELS, MOLECULAR; OXIDES;

MLCS; MLOWN;

EID: 84873324593     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/7/075803     Document Type: Article

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