Electronic transport in polycrystalline Pbl2 films

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2660-2667

  Street, R A ^a   Ready, S E ^a   Lemmi, F ^a   Shah, K S ^b   Bennett, P ^b   Dmitriyev, Y ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b RADIATION MONITORING DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; GRAIN SIZE AND SHAPE; HALL EFFECT; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING LEAD COMPOUNDS;

LEAD IODIDE;

SEMICONDUCTING FILMS;

EID: 0032614201     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371107     Document Type: Article

References (21)

1. S. Roth and W. R. Willig, Appl. Phys. Lett. 18, 328 (1971); K. S. Shah, J. C. Lund, F. Olschner, P. Bennett, J. Zhang, L. P. Moy, and M. R. Squillante, Nucl. Instrum. Methods Phys. Res. A 353, 85 (1994).
2. S. Roth and W. R. Willig, Appl. Phys. Lett. 18, 328 (1971); K. S. Shah, J. C. Lund, F. Olschner, P. Bennett, J. Zhang, L. P. Moy, and M. R. Squillante, Nucl. Instrum. Methods Phys. Res. A 353, 85 (1994).
3. K. S. Shah, F. Olschner, L. P. Moy, P. Bennett, M. Misra, J. Zhang, M. R. Squillante, and J. C. Lund, Nucl. Instrum, Methods Phys. Res. A 380, 266 (1996).
4. T. Shoji, K. Hitomi, T. Tiba, T. Suehiro, and Y. Hirate, IEEE Trans. Nucl. Sci. 45, 581 (1998).
5. R. A. Street, S. Nelson, L. Antonuk, and V. Perez Mendez, Mater. Res. Soc. Symp. Proc. 192, 441 (1990); R. A. Street, R. B. Apte, S. E. Ready, R. L. Weisfield, and P. Nylen, ibid. 487, 399 (1998).
6. R. A. Street, S. Nelson, L. Antonuk, and V. Perez Mendez, Mater. Res. Soc. Symp. Proc. 192, 441 (1990); R. A. Street, R. B. Apte, S. E. Ready, R. L. Weisfield, and P. Nylen, ibid. 487, 399 (1998).
7. W. Zhou, and J. A. Rowlands, Proc. SPIE 1651, 134 (1992).
8. D. L. Lee, L. K. Cheung, B. Rodericks, and G. F. Powell, Proc. SPIE 3336, 14 (1998).
9. K. S. Shah, P. Bennett, M. Klugerman, L. P. Moy, G. Entine, D. Ouimette, and R. Aikens, Proc. SPIE 3032, 395 (1997).
10. K. S. Shah, L. Cirignano, Y. Dmitriyev, M. Klugerman, K. Mandal, L. P. Moy, and R. A. Street, Mater. Res. Soc. Symp. Proc. 487, 351 (1998).
11. R. Street, K. S. Shah, S. Ready, R. Apte, P. Bennett, M. Klugerman, and Yuri Dmitriyev, Proc. SPIE 3336, 24 (1998).
12. S. Ross and G. Zentai, Mater. Res. Soc. Symp. Proc. 487, 393 (1998).
13. G. Pfister and H. Scher, Phys. Rev. B 15, 2062 (1977).
14. See, for example, R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991) for a general description of the electronic properties of amorphous semiconductors.
15. K. Hecht, Z. Phys. 77, 235 (1932).
16. R. A. Street, Phys. Rev. B 27, 4924 (1983).
17. F. Urbach, Phys. Rev. 92, 1324 (1953).
18. G. Herbeke and E. Tosatti, Proc. 12 Int. Conf. on the Physics of Semiconductors, edited by M. H. Pilkuhn (B. G. Teubner, Stuttgart, 1974), p. 626.
19. M. Mindar, G. Ottaviana, and C. Canali, J. Phys. Chem. Solids 37, 417 (1976).
20. N. F. Mott and E. A. Davis, Electronic Processes in Non-crystalline Semiconductors (Clarendon, Oxford, 1979), p. 248.
21. T. Tiedje, J. M. Cebulka, D. L. Morel, and B. Abeles, Phys. Rev. Lett. 46, 1425 (1981).