Limits on passivating defects in semiconductors: The case of Si edge dislocations

Physical Review Letters

Volumn 107, Issue 3, 2011, Pages

  Chan, Tzu Liang ^a   West, D ^a   Zhang, S B ^a  

^a Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT PASSIVATION; DEFECT SITES; DEFECTS IN SEMICONDUCTORS; DOPANT SEGREGATION; E-FORMS; FERMI-DIRAC DISTRIBUTION; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; N-TYPE DOPANTS; P-TYPE; P-TYPE DOPANT; THERMODYNAMIC LIMITS; UNIVERSAL CURVE;

CALCULATIONS; DEFECT DENSITY; ELECTRONIC PROPERTIES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

EDGE DISLOCATIONS;

EID: 79961053053     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.107.035503     Document Type: Article

References (26)

1. H.J. Queisser and E.E. Happer, Science 281, 945 (1998). SCIEAS 0036-8075 10.1126/science.281.5379.945
2. A. Goetzberger, C. Heblinga, and H.-W. Schock, Mater. Sci. Eng., R MIGIEA 0927-796X 40, 1 (2003). 10.1016/S0927-796X(02)00092-X
3. A.D. Compaan, Solar Energy Mater. Sol. Cells 90, 2170 (2006). SEMCEQ 0927-0248 10.1016/j.solmat.2006.02.017 (Pubitemid 43929361)
4. See, e.g., Proceedings of the IEEE Photovoltaic Specialists Conference (IEEE, New York, 2010).
5. C. Hammond, Introduction to Crystallography (Oxford University, New York, 1992), revised ed.
6. F. Liu, Phys. Rev. B PRBMDO 0163-1829 51, 17192 (1995). 10.1103/PhysRevB.51.17192
7. T.A. Arias and J.D. Joannopoulos, Phys. Rev. B PRBMDO 0163-1829 49, 4525 (1994). 10.1103/PhysRevB.49.4525
8. C. Gaire, Nanotechnology 21, 445701 (2010). NNOTER 0957-4484 10.1088/0957-4484/21/44/445701
9. J.D. Plummer, M.D. Deal, and Peter B. Griffin, Silicon VLSI Technology (Prentice-Hall, Englewood Cliffs, NJ, 2000).
10. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964). PHRVAO 0031-899X 10.1103/PhysRev.136.B864
11. W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965). PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
12. D.M. Ceperley and B.J. Alder, Phys. Rev. Lett. 45, 566 (1980). PRLTAO 0031-9007 10.1103/PhysRevLett.45.566
13. J.P. Perdew and Y. Wang, Phys. Rev. B PRBMDO 0163-1829 45, 13244 (1992). 10.1103/PhysRevB.45.13244
14. G. Kresse and J. Furthmüller, Comput. Mater. Sci. CMMSEM 0927-0256 6, 15 (1996); 10.1016/0927-0256(96)00008-0 (Pubitemid 126412269)
15. G. Kresse J. Furthmüller Phys. Rev. B PRBMDO 0163-1829 54, 11169 (1996). 10.1103/PhysRevB.54.11169
16. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 41, 7892 (1990). 10.1103/PhysRevB.41.7892
17. G. Kresse and J. Hafner, J. Phys. Condens. Matter 6, 8245 (1994). JCOMEL 0953-8984 10.1088/0953-8984/6/40/015
18. M. Mostoller, M.F. Chisholm, and T. Kaplan, Phys. Rev. Lett. 72, 1494 (1994). PRLTAO 0031-9007 10.1103/PhysRevLett.72.1494
19. T.A. Arias and J.D. Joannopoulos, Phys. Rev. Lett. 69, 3330 (1992). PRLTAO 0031-9007 10.1103/PhysRevLett.69.3330
20. A. Maiti, Phys. Rev. Lett. 77, 1306 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.77.1306
21. M.F. Chisholm, Phys. Rev. Lett. 81, 132 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.81.132
22. T. Kaplan, Phys. Rev. B PRBMDO 0163-1829 61, 1674 (2000). 10.1103/PhysRevB.61.1674
23. M. Diarra, Phys. Rev. B PRBMDO 1098-0121 75, 045301 (2007). 10.1103/PhysRevB.75.045301
24. Y.M. Niquet, Phys. Rev. B PRBMDO 1098-0121 81, 161301(R) (2010). 10.1103/PhysRevB.81.161301
25. R. Rurali, Rev. Mod. Phys. 82, 427 (2010). RMPHAT 0034-6861 10.1103/RevModPhys.82.427
26. M.V. Fernandez-Serra, Ch. Adessi, and X. Blase, Phys. Rev. Lett. 96, 166805 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96.166805 (Pubitemid 43667819)