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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 1, 2013, Pages

Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction

(8) Rommel, Mathias a Jambreck, Joachim D a Lemberger, Martin a Bauer, Anton J a Frey, Lothar a,b Murakami, Katsuhisa b,d Richter, Christoph c Weinzierl, Philipp c

a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c NANOWORLD SERVICES GMBH (Germany)

d UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE;

CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT CONDUCTION MECHANISMS; DATA EVALUATION; DISPLACEMENT CURRENTS; ELECTRICAL STRESS; I-V MEASUREMENTS; IV CHARACTERISTICS; LOW SENSITIVITY; NANO SCALE; PARASITIC CAPACITANCE; SWEEP RATES; TRANSIENT EFFECT; VOLTAGE SWEEP;

PROBES;

EID: 84872722895 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4768679 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.