Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy

AIP Conference Proceedings

Volumn 1395, Issue , 2011, Pages 134-138

  Murakami, Katsuhisa ^a   Rommel, Mathias ^b   Yanev, Vasil ^b   Bauer, Anton J ^b   Frey, Lothar ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

grain and grain boundary; high k; Tunneling AFM (TUNA)

Indexed keywords

EID: 84861059901     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3657879     Document Type: Conference Paper

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