Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films

Physica Status Solidi (B) Basic Research

Volumn 250, Issue 1, 2013, Pages 95-102

  Sreekumar, R ^a   Sajeesh, T H ^a   Abe, T ^b   Kashiwaba, Y ^b   Sudha Kartha, C ^a   Vijayakumar, K P ^a  

^a Department of Physics   (India)

^b IWATE UNIVERSITY   (Japan)

Author keywords

Indium selenide; Phase transitions; Photosensitivity; Thin films; X ray diffraction

Indexed keywords

DANGLING BONDS; GAMMA RAYS; LIGHT ABSORPTION; LIGHT SENSITIVE MATERIALS; NANOCRYSTALLINE MATERIALS; PHASE TRANSITIONS; PHOTOSENSITIVITY; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; CARRIER DIFFUSIONS; INDIUM CONCENTRATION; INDIUM SELENIDE; OPTICAL ENERGY GAP; OPTOELECTRONIC PROPERTIES; PHOTOGENERATED CARRIERS; SOLAR-CELL APPLICATIONS;

INDIUM COMPOUNDS;

EID: 84872177851     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201248268     Document Type: Article

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