γ-In2Se3 thin films obtained by annealing sequentially evaporated In and Se layers in flowing argon

Vacuum

Volumn 48, Issue 10, 1997, Pages 871-878

  Emziane, M ^a   Marsillac, S ^a   Ouerfelli, J ^a   Bernede J C ^a   Le Ny, R ^a  

^a Equipe Couches Minces Mat Nouveaux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EVAPORATION; GLASS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; TEXTURES; THERMAL EFFECTS; THIN FILMS;

INDIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0031245977     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(97)00094-8     Document Type: Article

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