Vacancy ordered structure of the III2VI3 compound semiconductor (GaxIn1-x.)2Se3 studied by electron diffraction and microscopy

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 73, Issue 1, 1996, Pages 169-186

  Ye, J ^a   Nakamura, Y ^a   Nittono, O ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039335666     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619608242975     Document Type: Article

References (16)

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