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Volumn 526, Issue , 2012, Pages 103-108
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Structural and optoelectronic properties of p-type semiconductor CuAlO 2 thin films
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Author keywords
Copper aluminum oxide; Optoelectronic properties; Semiconductor; Sputtering; Structure; Transmission electron microscopy; X ray diffraction
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Indexed keywords
ALUMINUM OXIDES;
DIRECT BAND GAP;
ELECTRICAL RESISTIVITY;
GRAIN SIZE;
HIGH-TEMPERATURE ANNEALING;
HOLDING TIME;
MAGNETRON-SPUTTERING DEPOSITION;
OPTOELECTRONIC PROPERTIES;
OXYGEN ATOM;
P TYPE SEMICONDUCTOR;
P-TYPE;
PHASE CHANGE;
QUARTZ SUBSTRATE;
ROOT MEAN SQUARE ROUGHNESS;
ALUMINUM;
ANNEALING;
COPPER;
ENERGY GAP;
GRAIN GROWTH;
GRAIN SIZE AND SHAPE;
QUARTZ;
SEMICONDUCTOR MATERIALS;
SPUTTERING;
STRUCTURE (COMPOSITION);
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
INTERFACES (MATERIALS);
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EID: 84872162325
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2012.11.033 Document Type: Article |
Times cited : (22)
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References (28)
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