Concentration induced damping of gas sensitivity in ultrathin tellurium films

Sensors and Actuators, B: Chemical

Volumn 177, Issue , 2013, Pages 1128-1133

  Tsiulyanu, D ^a   Mocreac, O ^a  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

Damping; Gas sensitivity; NO2; Tellurium; Ultrathin layers

Indexed keywords

AFM; AMORPHOUS STATE; CATALYTIC GATE; GAS SENSITIVITY; NITROGEN DIOXIDES; ULTRA-THIN; ULTRATHIN LAYERS; XRD ANALYSIS;

CHEMICAL SENSORS; DAMPING; NITROGEN OXIDES; TELLURIUM; TELLURIUM COMPOUNDS;

ULTRATHIN FILMS;

EID: 84872130094     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.12.022     Document Type: Article

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