Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronics

Organic Electronics

Volumn 14, Issue 2, 2013, Pages 505-510

  Mao, D ^a   Mejia, I ^a   Salas Villasenor, A L ^a   Singh, M ^a   Stiegler, H ^a   Gnade, B E ^a   Quevedo Lopez, M A ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

Ferroelectric polymer; Flexible electronics; Non volatile memory

Indexed keywords

ACCESS CONTROL; CADMIUM SULFIDE; CELLS; CYTOLOGY; FERROELECTRIC MATERIALS; FERROELECTRIC RAM; FERROELECTRICITY; FLEXIBLE ELECTRONICS; FLUORINE COMPOUNDS; II-VI SEMICONDUCTORS; IRON COMPOUNDS; MEMORY ARCHITECTURE; PHOTOLITHOGRAPHY; PROCESSING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR STORAGE; SULFUR COMPOUNDS; TEMPERATURE; THIN FILM TRANSISTORS;

FERROELECTRIC POLYMERS; FERROELECTRIC RANDOM ACCESS MEMORY; LOW- TEMPERATURE PROCESS; NON-VOLATILE MEMORY; NON-VOLATILE RANDOM ACCESS MEMORY; PHOTOLITHOGRAPHIC PROCESS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)]; THIN FILM TRANSISTORS (TFTS);

FERROELECTRIC DEVICES;

EID: 84872108913     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.10.035     Document Type: Article

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