Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Journal of Applied Physics

Volumn 113, Issue 1, 2013, Pages

  Capellini, G ^a,b   Kozlowski, G ^b   Yamamoto, Y ^b   Lisker, M ^b   Wenger, C ^b   Niu, G ^b   Zaumseil, P ^b   Tillack, B ^b,c   Ghrib, A ^d   De Kersauson, M ^d   El Kurdi, M ^d   Boucaud, P ^d   Schroeder, T ^b,e  

^a ROMA TRE UNIVERSITY   (Italy)

^b IHP   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d CNRS   (France)

^e BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSILE STRAIN; DIFFERENT SHAPES; METAL OXIDE SEMICONDUCTOR; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRAIN ANALYSIS; STRAIN DISTRIBUTIONS; THREE DIMENSIONS;

GERMANIUM; SILICON; SILICON NITRIDE; TENSILE STRAIN;

MICROSTRUCTURE;

EID: 84872062048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772781     Document Type: Article

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