TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal-insulator-metal capacitors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Weinreich, Wenke ^a   Tauchnitz, Tina ^a   Polakowski, Patrick ^a   Drescher, Maximilian ^a   Riedel, Stefan ^a   Sundqvist, Jonas ^a   Seidel, Konrad ^a   Shirazi, Mahdi ^b   Elliott, Simon D ^b   Ohsiek, Susanne ^c   Erben, Elke ^c   Trui, Bernhard ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c GLOBALFOUNDRIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BOTTOM ELECTRODES; DEPOSITION PROCESS; HIGH GROWTH RATE; HIGH-K DIELECTRIC; INTEGRATION APPROACH; INTEGRATION SCHEME; LOW-LEAKAGE CURRENT; MATERIAL PROPERTY; METAL INSULATOR METAL CAPACITOR (MIM); MIM CAPACITORS; OPTIMIZED INTERFACE PROPERTIES; PROCESS MODELLING; PROCESS TIME; PROCESS VARIATION; SEMICONDUCTOR INDUSTRY; TIN ELECTRODES; WET CHEMICAL TREATMENT;

ATOMIC LAYER DEPOSITION; BOTTLES; CAPACITORS; CHEMICAL ANALYSIS; ELECTRIC PROPERTIES; GROWTH RATE; INTEGRATION; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM NITRIDE; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 84871915884     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4766281     Document Type: Article

References (23)

1. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 075105 (2002). 10.1103/PhysRevB.65.075105
2. D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Chem. Mater. 14, 4350 (2002). 10.1021/cm020357x
3. J. Niinistö, J. Mater. Chem. 18, 5243 (2008). 10.1039/b810922b
4. W. Weinreich, Microelectron. Eng. 86, 1826 (2009). 10.1016/j.mee.2009.03. 070
5. S. D. Elliott, G. Scarel, C. Wiemer, M. Fanciulli, and G. Pavia, Chem. Mater. 18, 3764 (2006). 10.1021/cm0608903 (Pubitemid 44318557)
6. B.-C. Kan, J.-H. Boo, I. Lee, and F. Zaera, J. Phys. Chem. A 113, 3946 (2009). 10.1021/jp8102172
7. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
8. J. Harris, Phys. Rev. B 31, 1770 (1985). 10.1103/PhysRevB.31.1770
9. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993). 10.1103/PhysRevB.47.558
10. R. L. Puurunen, Chem. Vap. Deposition 9, 249 (2003). 10.1002/cvde. 200306265
11. S. D. Elliott, Comput. Mater. Sci. 33, 20 (2005). 10.1016/j.commatsci. 2004.12.032 (Pubitemid 40319652)
12. See: http://meetings.aps.org/Meeting/MAR12/Event/167673.
13. D. R. Lide, CRC Handbook of Chemistry and Physics (Taylor Francis, London, 2006).
14. 2 influenced by atomic layer deposition, substrate, and doping.," J. Vac. Sci. Technol. A 31, 01A119 (2013). 10.1116/1.4765047
15. M. W. Pitcher, S. V. Ushakov, A. Navrotsky, B. F. Woodfield, G. Li, J. Boerio-Goates, and B. M. Tissue, J. Am. Ceram. Soc. 88, 160 (2005). 10.1111/j.1551-2916.2004.00031.x (Pubitemid 41556729)
16. K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008). 10.1021/cm800460b
17. T. Aaltonen, P. Alen, M. Ritala, and M. Leskela, Chem. Vap. Deposition 9, 45 (2003). 10.1002/cvde.200290007
18. S. D. Elliott, Langmuir 26, 9179 (2010). 10.1021/la101207y
19. R. Srinivasan, R. J. De Angelis, G. Ice, and B. H. Davis, J. Mater. Res. Soc. 6, 1287 (1991). 10.1557/JMR.1991.1287
20. S. K. Dey, C.-G. Wang, D. Tang, M. J. Kim, R. W. Carpenter, C. Werkhoven, and E. Shero, J. Appl. Phys. 93, 4144 (2003). 10.1063/1.1555257
21. X. Zhao, D. Ceresoli, and D. Vanderbilt, Phys. Rev. B 71, 085107 (2005). 10.1103/PhysRevB.71.085107 (Pubitemid 40470929)
22. S. Ramanathan, C.-M. Park, and P. C. McIntyre, J. Appl. Phys. 91, 4521 (2002). 10.1063/1.1459103 (Pubitemid 34435609)
23. Y. Kim, J. Nanosci. Nanotechnol. 11, 8309 (2011). 10.1166/jnn.2011.5043