The development of high-rate deposition technology for microcrystalline silicon for high-efficiency a-Si/μc-Si tandem solar module

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 35-40

  Matsumoto, Mitsuhiro ^a,b   Aya, Youichirou ^a   Kuroda, Akihiro ^a   Katayama, Hirotaka ^a   Kunii, Toshie ^a   Murata, Kazuya ^a   Hishida, Mitsuoki ^a   Shinohara, Wataru ^a   Yoshida, Isao ^a   Kitahara, Akinao ^a   Yoneda, Haruki ^a   Terakawa, Akira ^a   Iseki, Masahiro ^a   Tanaka, Makoto ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Microcrystalline silicon; photovoltaic cells; plasma materials processing; plasma measurements; thin film silicon solar cells

Indexed keywords

CATHODE STRUCTURE; HIGH PRESSURE; HIGH-RATE DEPOSITION; PLASMA MATERIALS; PLASMA MEASUREMENT; SOLAR MODULE; TANDEM SOLAR CELLS; THIN-FILM SILICON SOLAR CELLS;

CONVERSION EFFICIENCY; DEPOSITION RATES; MICROCRYSTALLINE SILICON; PHOTOVOLTAIC CELLS; PLASMA CONFINEMENT; PLASMA STABILITY; SILICON; SUBSTRATES;

CHEMICAL VAPOR DEPOSITION;

EID: 84871767986     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2216857     Document Type: Article

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