Development of Localized Plasma Confinement (LPC) CVD method for high rate and uniform deposition of thin-film crystalline Si

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1580-1583

  Matsumoto, Mitsuhiro ^a   Kawamoto, Kunihiro ^a   Mishima, Takahiro ^a   Haku, Hisao ^a   Shima, Masaki ^a   Terakawa, Akira ^a   Tanaka, Makoto ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION RATES; PLASMA CONFINEMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

GAS UTILIZATION EFFICIENCIES; PUMPING HOLES;

SILICON;

EID: 41749110243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279787     Document Type: Conference Paper

References (4)

1. E. Maruyama, S. Okamoto, A. Terakawa, W. Shinohara, M. Tanaka, and S. Kiyama, Sol. Energy. Mater. Sol. Cell 74, (2002) 339.
2. M. Shima, M. Nakagawa, S. Taira, M. Matsumoto, W. Shinohara, S. Matsumi, K. Murata and M. Tanaka, Proc. of WCPEC-3, (2003)1835
3. L. Guo, M.Kondo, M. Fukawa, K. Saitou and A. Matsuda, Jpn. J. Appl. Phs. 37(1998) L1116
4. M. Matsumoto, M. Shima, S. Okamoto, K. Murata, M. Tanaka, S. Kiyama, H. Kakiuchi, K. Yasutake, K. Yoshii, K. Endo, and Y. Mori, Proc. of WCPEC-3, (2003)1552