Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Mal, Siddhartha ^a   Nori, Sudhakar ^a   Mula, Suhrit ^a,b   Narayan, J ^a   Prater, J T ^c  

^a North Carolina State University   (United States)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EXPERIMENTS; AS-GROWN; DEFECT CONCENTRATIONS; DOPED FILMS; ELECTRICAL CONDUCTIVITY; EPITAXIAL THIN FILMS; GROWTH CONDITIONS; INTRINSIC DEFECTS; IRRADIATED FILMS; MN IONS; MN-DOPED; MN-DOPED ZINC OXIDE; N-TYPE CONDUCTIVITY; NANOSECOND LASER PULSE; OXYGEN AMBIENT; OXYGEN-VACANCY COMPLEXES; ROOM-TEMPERATURE FERROMAGNETISM; SEMICONDUCTING BEHAVIOR; TETRAHEDRAL COORDINATION; THERMAL-ANNEALING; UV EMISSIONS; VALANCE STATE; WURTZITE CRYSTAL STRUCTURE; ZNO;

ANNEALING; DEFECTS; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROMAGNETISM; LASER PULSES; LASERS; MAGNETIC MOMENTS; MANGANESE; METAL ANALYSIS; OXYGEN; SATURATION MAGNETIZATION; SEMICONDUCTING FILMS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

COBALT;

EID: 84871196356     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768721     Document Type: Article

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