SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 2, Issue 24, 2012, Pages 9100-9105

Controlled performance of an organic transistor memory device with an ultrathin LiF blocking layer

(4) Wang, Sumei a,b Chan, Paddy K L b Wah Leung, Chi b Zhao, Xurong a

a SHANDONG UNIVERSITY (China)

b HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING EFFECT; BLOCKING LAYERS; CHARGE RETENTION; HOLE INJECTION; MEASUREMENT TIME; MEMORY EFFECTS; MEMORY PERFORMANCE; MEMORY WINDOW; ON/OFF CURRENT RATIO; ORGANIC TRANSISTOR; PENTACENE LAYERS; PENTACENE TRANSISTORS; SILVER NANOPARTICLES; TRAP CENTER; TRAPPED CHARGE; ULTRA-THIN; ULTRATHIN LAYERS;

NANOPARTICLES;

SILVER;

EID: 84871065428 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c2ra21012f Document Type: Article

Times cited : (15)

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