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Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

Investigation of three-terminal organic-based devices with memory effect and negative differential resistance

(2) Yu, Li Zhen a Lee, Ching Ting a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ACTIVE LAYER; AU ELECTRODES; GATE-SOURCE VOLTAGE; MEMORY EFFECTS; METAL ELECTRODES; NEGATIVE DIFFERENTIAL RESISTANCES; ORGANIC-BASED DEVICES; TRAPPING SITES;

GOLD; HETEROJUNCTION BIPOLAR TRANSISTORS; NEGATIVE RESISTANCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70249148559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224201 Document Type: Article

Times cited : (9)

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