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Volumn , Issue , 2012, Pages 2245-2248

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM METALLIZATION; CONSTANT POWER; CURRENT LEVELS; FAILURE MECHANISM; HOLE INJECTION; JUNCTION BARRIER SCHOTTKY DIODES; MOTOR DRIVE; POWER DIODE; SAFE OPERATION AREA; SIC DIODES; SINUSOIDAL PULSE; STRESS TEST; SURGE CURRENT;

EID: 84870943485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342436     Document Type: Conference Paper
Times cited : (32)

References (13)
  • 2
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    • Jul
    • M. Roschke and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]," Electron Devices, IEEE Transactions on, vol. 48, no. 7, pp. 1442-1447, Jul. 2001.
    • (2001) Electron Devices, IEEE Transactions on , vol.48 , Issue.7 , pp. 1442-1447
    • Roschke, M.1    Schwierz, F.2
  • 4
    • 49249118798 scopus 로고    scopus 로고
    • Optimization of on-state and switching performances for 15-20-kV 4H-SiC IGBTs
    • Aug
    • T. Tamaki, G. G. Walden, Y. Sui, and J. A. Cooper, "Optimization of on-State and Switching Performances for 15-20-kV 4H-SiC IGBTs," Electron Devices, IEEE Transactions on, vol. 55, no. 8, pp. 1920-1927, Aug. 2008.
    • (2008) Electron Devices, IEEE Transactions on , vol.55 , Issue.8 , pp. 1920-1927
    • Tamaki, T.1    Walden, G.G.2    Sui, Y.3    Cooper, J.A.4
  • 5
    • 59849115195 scopus 로고    scopus 로고
    • Maximum junction temperatures of SiC power devices
    • feb
    • K. Sheng, "Maximum Junction Temperatures of SiC Power Devices," Electron Devices, IEEE Transactions on, vol. 56, no. 2, pp. 337-342, Feb. 2009.
    • (2009) Electron Devices, IEEE Transactions on , vol.56 , Issue.2 , pp. 337-342
    • Sheng, K.1
  • 8
    • 34447264585 scopus 로고    scopus 로고
    • A new degradation mechanism in high-voltage SiC power MOSFETs
    • Jul
    • A. Agarwal, H. Fatima, S. Haney, and S.-H. Ryu, "A New Degradation Mechanism in High-Voltage SiC Power MOSFETs," Electron Device Letters, IEEE, vol. 28, no. 7, pp. 587-589, Jul. 2007.
    • (2007) Electron Device Letters, IEEE , vol.28 , Issue.7 , pp. 587-589
    • Agarwal, A.1    Fatima, H.2    Haney, S.3    Ryu, S.-H.4
  • 12
    • 0014630193 scopus 로고
    • Electromigration failure modes in aluminum metallization for semiconductor devices
    • Sep
    • J. R. Black, "Electromigration failure modes in aluminum metallization for semiconductor devices," Proceedings of the IEEE, vol. 57, no. 9, pp. 1587-1594, Sep. 1969.
    • (1969) Proceedings of the IEEE , vol.57 , Issue.9 , pp. 1587-1594
    • Black, J.R.1
  • 13
    • 78649443950 scopus 로고    scopus 로고
    • Reliability of aluminum-bearing ohmic contacts to SiC under high current density
    • Dec
    • B. P. Downey, S. E. Mohney, T. E. Clark, and J. R. Flemish, "Reliability of aluminum-bearing ohmic contacts to SiC under high current density," Microelectronics Reliability, vol. 50, no. 12, pp. 1967-1972, Dec. 2010.
    • (2010) Microelectronics Reliability , vol.50 , Issue.12 , pp. 1967-1972
    • Downey, B.P.1    Mohney, S.E.2    Clark, T.E.3    Flemish, J.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.