Electrothermal simulation of 4H-SiC power devices

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 917-920

  Wright, N G ^a   Morrison, D J ^a   Johnson, C M ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Electrothermal Simulation; Switching Comparison; UMOS

Indexed keywords

COMPUTER AIDED DESIGN; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SWITCHING CIRCUITS; THERMAL EFFECTS;

ELECTROTHERMAL SIMULATION; UMOS DEVICES;

MESFET DEVICES;

EID: 11644321903     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.917     Document Type: Article

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