Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 1, 2008, Pages 2547-2550

  Cho, Ji Ung ^a   Kim, Do Kyun ^a   Wang, Tian Xing ^a   Isogami, Shinji ^b   Tsunoda, Masakiyo ^b   Takahashi, Migaku ^b   Kim, Young Keun ^a  

^a Korea University   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Hybrid free layer; Low saturation magnetization; Magnetic tunnel junction; NiFeSiB

Indexed keywords

EID: 66549112129     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2003244     Document Type: Article

References (12)

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