Chemically doped radial junction characteristics in silicon nanowires

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6133-6138

  Ng, Man Fai ^a   Tong, Shi Wun ^b  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

density functional theory; electronic structure calculation; radial doping; radial p n junction; Silicon nanowire

Indexed keywords

CHEMICALLY DOPED; CO-DOPED; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPANT CONCENTRATIONS; ELECTRONIC STRUCTURE CALCULATIONS; EXPERIMENTAL OBSERVATION; INTERFACIAL CONTACT; P-DOPING; P-N JUNCTION; SILICON NANOWIRES;

DOPING (ADDITIVES); ELECTRONIC STRUCTURE; NANOWIRES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; SILICON;

DENSITY FUNCTIONAL THEORY;

EID: 84870914048     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302906k     Document Type: Article

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