Density of states measurements in a p-i-n solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 1117-1120

  Crandall, Richard S ^a   Wang, Qi ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRON DENSITY MEASUREMENT; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

CHARGED DANGLING BONDS; DEFECT DENSITY; DRIVE LEVEL CAPACITANCE; NEUTRAL DANGLING BONDS;

SILICON SOLAR CELLS;

EID: 0030386345     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564327     Document Type: Conference Paper

References (4)