Simulations of photo- carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers

10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

Volumn , Issue , 2010, Pages 73-74

  Kanevce, A ^a,b   Li, J V ^a   Crandall, R S ^a   Page, M R ^a   Iwaniczko, E ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE TRANSIENT; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HIT CELLS; LIGHT PULSE; MATERIAL QUALITY; MINORITY CARRIER; PHOTOCARRIER; PHOTOVOLTAGE DECAY; SIMULATION RESULT; VOLTAGE BIAS;

COMPUTER SIMULATION; ELECTROOPTICAL DEVICES; HETEROJUNCTIONS; SILICON WAFERS;

OPTOELECTRONIC DEVICES;

EID: 78449308815     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2010.5595659     Document Type: Conference Paper

References (5)

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2. M. Taguchi, et al., Progress in Photovoltaics 8, 503-513 (2000).
3. nd EU PVSEC (Milan, 2007), pp. 932-936.
4. Synopsis, "TCAD DEVICE Manual" www.synopsis.com, (Zurich, Switzerland, 2006).
5. A. Kanevce, and W. K. Metzger, Journal of Applied Physics 105 (2009).